RS1L120GNTB
Rohm Semiconductor
Deutsch
Artikelnummer: | RS1L120GNTB |
---|---|
Hersteller / Marke: | LAPIS Technology |
Teil der Beschreibung.: | MOSFET N-CH 60V 12A/36A 8HSOP |
Datenblätte: | None |
RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $1.75 |
10+ | $1.569 |
100+ | $1.2614 |
500+ | $1.0364 |
1000+ | $0.8587 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 2.7V @ 200µA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | 8-HSOP |
Serie | - |
Rds On (Max) @ Id, Vgs | 12.7mOhm @ 12A, 10V |
Verlustleistung (max) | 3W (Ta) |
Verpackung / Gehäuse | 8-PowerTDFN |
Paket | Tape & Reel (TR) |
Betriebstemperatur | 150°C (TJ) |
Produkteigenschaften | Eigenschaften |
---|---|
Befestigungsart | Surface Mount |
Eingabekapazität (Ciss) (Max) @ Vds | 1330 pF @ 30 V |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain-Source-Spannung (Vdss) | 60 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 12A (Ta), 36A (Tc) |
Grundproduktnummer | RS1L |
DIODE GEN PURP 800V 1A SMA
DIODE GEN PURP 800V 1A SOD123F
MOSFET N-CH 60V 14.5A/47A 8HSOP
DIODE GEN PURP 800V 1A SOD123W
PCH -60V -56A, HSOP8, POWER MOSF
DIODE GEN PURP 1KV 1A SMA
DIODE GEN PURP 800V 1A SMA
250NS, 1A, 800V, FAST RECOVERY R
V SMA(W)
KTP SMAF
MOSFET N-CH 60V 18A/68A 8HSOP
DIODE GEN PURP 800V 1A SMA
DIODE GEN PURP 800V 1A MICRO SMA
FAST RECOVERY RECTIFIER PDI123 T
ROHM DFN5x6
CHINA SMA
DO214AC(SMA)
DIODE GEN PURP 1A DO214AC
DIODE GEN PURP 800V 1A SOD123W
DIODE GEN PURP 1KV 1A DO214AC
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() RS1L120GNTBRohm Semiconductor |
Anzahl*
|
Zielpreis (USD)
|